Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

Charge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.published_or_final_versio

Sub-ambient CO oxidation over Au/MO x/CeO 2-Al 2O 3 (M = Zn or Fe)

A series of ZnO and Fe 2O 3 modified ceria/alumina supports and their corresponding gold catalyst were prepared and studied in the CO oxidation reaction. ZnO-doped solids show a superior catalytic activity compared to the bare CeO 2-Al 2O 3, which is attributed to the intimate contact of the ZnO and CeO 2 phases, since an exchange of the lattice oxygen occurs at the interface. In a similar way, Fe 2O 3-modified supports increase the ability of the CeO 2-Al 2O 3 solids to eliminate CO caused by both the existence of Ce-Fe contact surface and the Fe 2O 3 intrinsic activity. All of the gold catalysts were very efficient in oxidising CO irrespective of the doping metal oxide or loading, with the ZnO containing systems better than the others. The majority of the systems reached total CO conversion below room temperature with the ZnO and Fe 2O 3 monolayer loaded systems the most efficient within the series.Ministerio de Ciencia e Innovación ENE2009-14522-C05-01Junta de Andalucía P09-TEP-545

Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications

Yttrium-doped Al 2O 3Y xAl yO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO 2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be suppressed by Y doping through the transformation of silica into silicate. Compared with Al 2O 3 and Y 2O 3 films, the optimized Y xAl yO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized Y xAl yO film is a promising candidate as the IPD for flash memory. © 2010 IEEE.published_or_final_versio

Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode

A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al 2O 3 layer. The memory exhibited good reading endurance and retention characteristics. © 2011 IEEE.published_or_final_versio

A light-controlled resistive switching memory

Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; EspañaFil: Zazpe, Raul. CIC nanoGUNE Consolider; EspañaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. CIC nanoGUNE Consolider; EspañaFil: Stoliar, Pablo Alberto. Comisión Nacional de Energía Atómica; Argentina. CIC nanoGUNE Consolider; EspañaFil: Llopis, Roger. CIC nanoGUNE Consolider; EspañaFil: Casanova, Felix. CIC nanoGUNE Consolider; España. Basque Foundation for Science; EspañaFil: Hueso, Luis E.. CIC nanoGUNE Consolider; España. Basque Foundation for Science; Españ

Charging-induced changes in reverse current-voltage characteristics of Al/Al-Rich Al 2O 3/p-Si Diodes

An Al-rich Al 2O 3 thin film was deposited on a p-type silicon substrate by radio frequency sputtering to form Al/ Al-rich Al 2O 3/p-Si diodes. The current-voltage (I-V) characteristics of the diodes were determined by carrier injection from either the Si substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-V characteristics were greatly affected by the charge trapping in the oxide layer, i.e., the electron trapping significantly reduced the reverse current while the hole trapping enhanced the current significantly. However, the charge trapping did not produce a large change in the forward I-V characteristic. © 2009 IEEE.published_or_final_versio

Stepwise synthesis of sandwich-structured composite zeolite membranes with enhanced separation selectivity

Sandwich-structured composite zeolite membranes with enhanced hydrogen selectivity were prepared on porous α-Al 2O 3 supports by using 3-aminopropyltriethoxysilane as an interlayer. © 2012 The Royal Society of Chemistry

Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films

In this work, Al/Al 2O 3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It is found that the current conduction at low fields is greatly enhanced with temperature. The current increase can be attributed to the decrease in the tunneling resistance and/or the formation of some tunneling paths due to the release of some measurement-induced charges trapped in the thin film as a result of increase in the temperature. The current conduction evolves with a trend toward a three-dimensional transport as the temperature increases. © 2011 American Institute of Physics.published_or_final_versio

Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films

The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO 2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y 2O 3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al 2O 3/HfYON/SiO 2/Si structure shows high program speed (4.5 V at 14 V, 1 ms), large memory window (6.0 V at 14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications. © 2011 American Institute of Physics.published_or_final_versio

Formation of a heterometallic Al^III/Sm^III complex involving a novel [EtAl(2-py)<inf>2</inf>O]^2- ligand (2-py = 2-pyridyl)

Controlled O2-oxidation of the Sm(II) sandwich compound [{EtAl(2-py)3}2Sm] (1a) gives the Sm(III)/Al(III) compound [{EtAl(2-py)3}{EtAl(2-py)2O}Sm]2 (2), containing the novel multifunctional dianionic ligand [EtAl(2-py)2O]2-. The formation of an O-bridged Al-O-Sm arrangement in the structure of 2 is potentially relevant to the catalytic epoxidation of styrene with dry air using heterobimetallic sandwich compounds like 1a.We gratefully acknowledge the EU (Marie Curie Intra European Fellowship within the 7th European Community Framework Programme for R.G.-R., Advanced Investigator Award for D.S.W., studentship for H.R.S.).This is the author accepted manuscript. The final version is available from ACS at https://pubs.acs.org/doi/abs/10.1021/om5009132